Numerical and Experimental Investigation of Single Event Effects in SOI Lateral Power MOSFETs

Abstract

150 V SOI lateral power MOSFETs were designed and fabricated with features intended to provide hardness against SEB and SEGR. The response of SOI power MOSFETs to heavy ion radiation was investigated both experimentally and using TCAD simulations. These power MOSFETs demonstrated an electrical performance figure of merit <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$Q_{\rm GD}\times R_{\rm DSON}$</tex></formula> considerably improved over state of the art commercial trench VDMOS and rad-hard planar VDMOS devices, and survived heavy ion irradiation at the full <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$V_{\rm DS}$</tex></formula> biasing of 150 V and full <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$V_{\rm GS}$</tex></formula> biasing of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">${- 16}~{\rm V}$</tex></formula> simultaneously.