Abstract
Two-dimensional electron mobilities in AlGaN-channel nitride heterostructures were numerically and experimentally analyzed. The calculation and experimental results indicated that mobility for InAlN/AlGaN heterostructures grown by metalorganic chemical vapor deposition was limited by interface roughness scattering as well as alloy disorder scattering. The mobility limits for AlGaN-channel heterostructures with a two-dimensional electron gas (2DEG) density of 3 × 1013/cm2 were estimated to be, for instance, 249 cm2 V−1 s−1 for an Al0.3Ga0.7N channel and 192 cm2 V−1 s−1 for an Al0.5Ga0.5N channel. The calculated values showed no major disagreement with the results reported on AlGaN-channel heterostructures.
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