Abstract
Because future advances in LSI (large-scale integrated circuit) technology will require further reduction of the size, the multilayered structure is being intensively investigated. The formation process of interconnections between the layers is one of the key issues in order to accomplish the structure. Reflow, whereby the via-hole is filled with the conductor metal by surface diffusion, is a promising method though its process has not yet been clarified in detail. In this study, the reflow process is simulated numerically for a two-dimensional model (filling into a groove) and an axisymmetrical one (filling into a circular cylinder) by solving the differential equation of surface diffusion by a finite dellevence method. The results show that perfect filling cannot be obtained for the groove or the cylinder when the aspect ratio, depth/half width or depth/radius, is larger than 3. Moreover, the time for the filling depends strongly on the aspect ratio.
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