Abstract
A finite difference technology is applied to the InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) structures in order to determine their electronic properties. Conventional quantum dots (QDs) sample has a simple structure, i.e., the QDs are imbedded in a GaAs bulk medium. In stead of the conventional structure, we prefer the weak confinement DWELL structure because it can efficiently lower the intersubband transition energy. Thus the DWELL detector is expected to make the longer wavelength detection possible. Present method used in this study is demonstrated to be efficient and flexible for determining the electronic state of the DWELL system. However, to our knowledge there has been no literature reporting so far on the electronic structure of DWELL characterized by the finite difference method.
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