Abstract
Antimony selenide is considering as an emerging photovoltaic solar cell absorber. In this paper, Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) is used to investigate the possibility of realizing ultrathin Sb2Se3-based solar cells. The comparison of the current-voltage characteristic and output performances simulation results of CdS/Sb2Se3 solar cells with and without HTL are in agreement with the experimental results. In the first step, by considering the cell without HTL, the best PCE of 5.29% is obtained with WS2 buffer layer. Thereafter, we simulated the impact of the charge carriers diffusion length and the doping concentration on the output performances. By combining a high quality absorber and doping concentration in the order of 1015 cm−3, Sb2Se3 solar cell achieves high PCE above 10%. Secondly, we introduced a HTL between the absorber layer and back metal contact, which led to n-i-p configuration. This configuration with CZ-TA HTL shows a best PCE of 6.29%. For a high quality absorber, Sb2Se3-based solar cell achieves best PCE of 11.10% and better stability for a thickness of 250 nm and doping concentration of 1014 cm−3 of the Sb2Se3 absorber layer. Our numerical solar cell design provides an approach to further improve the efficiency of Sb2Se3-based solar cells.
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