Abstract
The chemical vapor deposition (CVD) is an important approach to produce polycrystalline silicon for solar energy application. In this study, a model coupled with gas reactions and surface reactions has been built and simulated the characteristic of deposition process in a trichlorosilane and hydrogen system. The influence of the surface temperature, the reactor pressure and the deposition time on the growth rate has been analyzed in detail. The conclusions are helpful to guide the polycrystalline silicon production.
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