Abstract
The effects of substrate trap ‘EL2’ on the turn-on characteristics of GaAs MESFETs are studied through two-dimensional simulation. It is found that abnormal current overshoot and subsequent slow transients can be observed due to EL2 when the off-state gate voltage is strongly negative and electrons are also depleted in the substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
