Abstract
For a wide range of the thicknesses of the charge and the multiplication layers, detection efficiency and dark count probability are numerically investigated for GaInAs∕InP single photon detection avalanche photodiodes (APD’s) which are operated in the Geiger mode. Breakdown probability and dark currents are calculated to evaluate detection efficiency and dark count probability. The result shows that dark count probability can be significantly reduced by increasing the thickness of the charge layer, whereas detection efficiency is expected to decline steeply at some thickness of the charge layer. Moreover, increasing the thickness of the multiplication layer does not continue to reduce dark count probability, which increases when the multiplication layer is thicker than a critical thickness. Finally, we show a design guideline of single photon detection APD’s with higher detection efficiency and lower dark count probability.
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