Abstract
A new approach to the analysis of random dopant-induced effects in semiconductor devices is presented. It is based on the "small signal analysis" (perturbation) technique. This approach is computationally much more efficient than the existing purely "statistical" techniques, and it yields the information that can be directly used for the design of dopant fluctuation-resistant structures of semiconductor devices. This approach is applied to the analysis of random dopant-induced fluctuations of threshold voltages and frequency response characteristics of MOSFET devices.
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