Abstract

The massive decline in clean energy sources have prompted researchers worldwide to look for alternative sources to meet up with the increasing energy demands. Semiconductor devices play an important role for the construction of such energy producing devices. One such material is Molybdenum Telluride (MoTe 2 ), which has emerged as a viable option to achieve improved cell stability and performance. In this paper, SCAPS-1D simulator was used to conduct the numerical analysis to examine the basic performance parameters (V oc , J sc , FF and conversion efficiency) of an ultra-thin MoTe 2 PV cell. An additional BSF layer Copper Telluride (Cu 2 Te) was incorporated between the absorber layer and back metal contact to achieve an efficient and a stable cell model. The modified cell model showed better cell parameters of 29.13% conversion efficiency, FF = 85.26%, V oc = 0.8825 V, J sc = 387.139395 mA/cm2 at 1.5 μm of absorber layer and BSF layer thickness of 10 nm compared to the baseline structure which displayed parameters of conversion efficiency 15.45%, FF= 56.69%, V oc = 0.7690 and J sc = 354.451474 mA/cm2 without the BSF layer.

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