Abstract
Self-consistent calculations of the band profile are carried out for realistic models to analyze the experimental results obtained from the specimens grown by MOVPE. In the calculations, conduction band pinnings at the surface and the epitaxial layer/substrate interface and the interface grading are taken into account with other material constants. The calculated values of the sheet carrier concentration ns, for the abrupt interface agree with the experimental results for the specimens with a mobility greater than 1000 cm2/V·s at 4.2 K. The experimental results for the specimens with a mobility less than 7000 cm2/V·s cannot be explained by assuming gradings of the aluminium mole fraction x and the donor concentration ND in AlGaAs layer. The agreement between the calculated and experimental results is obtained by considering the acceptor concentration grading in the AlGaAs region of heterointerface (HI). The result shows that the quality of the AlGaAs layers is the most important factor to improve the electrical properties of the HI.
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