Numerical analysis of field-effect surface passivation for solar cells

Abstract

In order to investigate the influence of surface potential on the electric characteristics of solar cells, the characteristics of conventional cells and back-contact type high-efficiency silicon cells were analyzed using 2-dimensional numerical simulation, varying the surface electrical potential. The locations where surface electrical potential is controlled are the rear side in conventional cells and the front side in back-contact cells. As a result of the calculations, it was found that field-effect surface passivation yields cell characteristics equivalent to those of a cell with effective surface recombination velocity of 0 cm/s, even if the cell has a poor Si SiO 2 interface (i.e., D it > 1.0 × 10 11cm −2eV −1). It was also found that both the use of a higher resistivity wafer and — especially in p-type substrates — the formation of inversion layers causes the field-effect surface passivation to work the fullest effect. In addition, a computer simulation based on physical-parameter measurements taken from actual materials forecasts that a back-contact cell would realistically be able to exceed 25% efficiency under AM1.5 global, one-sun illumination.