Abstract
Numerical analysis of continuous wave (CW) on-off optical Raman gain in Silicon-On-insulator (SOI) nano-waveguides has been investigated. Two types of waveguide structures rib and strip waveguides have been incorporated. The waveguide structures have designed to be 220 nm in height. Three different widths of (350, 450, 1000) nm were studied. At telecommunication wavelength of 1550 nm, Raman amplification was calculated to be about 65 dB in rib SOI waveguide. The obtained Raman amplification is the heist reported value at relatively low pump power. High Raman gain amplification in SOI nano-waveguides presents an important step towards integrated on-chip optoelectronic devices.
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