Abstract
We performed numerical analysis of the current–voltage characteristics of long-wavelength infrared unipolar HgCdTe nBn photodetectors and compared those results with those of conventional p-on-n HgCdTe photodiodes. A computer program was applied to explain in detail the impact of the charge carrier generation and recombination processes on current densities. In our model the carrier diffusion, thermal generation–recombination, band-to-band tunneling, trap-assisted tunneling (via states located at mercury vacancies as well as dislocation cores), and impact ionization are included as potential limiting mechanisms. To validate the model, we compared the theoretical predictions with experimental data of high-quality p-on-n photodiodes published in the literature.
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