Abstract
It is adopted the single-diode solar cell model and extended for a PV module. The current vs. voltage (I-V) characteristic based on the Lambert W-function was used. The estimation parameters for the simulation approach of the photovoltaic (PV) module make use of Levenberg-Marquardt method. It was considered an industrial polycrystalline silicon photovoltaic (PV) module and the simulated results were compared with the experimental ones extracted from a specific datasheet. The I-V characteristic for the analysed PV module and its maximum output power are investigated for different operating conditions of incident solar radiation flux and temperature, as well as parameters related to the solar cells material and technology (series resistance, shunt resistance and gamma factor). The analysis gives indications and limitations for design and optimization of the performance for industrial PV modules. This study can be implemented in any type of PV module.
Highlights
Circuit-based models of photovoltaic (PV) arrays are being developed in order to predict the performance of PV modules in different operating conditions like solar irradiance and temperature
This study presents a comprehensive numerical analysis of performance optimization of a PV module based on polycrystalline silicon solar cells grouped in series
The novelty of this research consists in the numerical analysis based on single diode model applied for a PV module and the use of the Lambert W function for such an approach
Summary
Circuit-based models of photovoltaic (PV) arrays are being developed in order to predict the performance of PV modules in different operating conditions like solar irradiance and temperature. There are many other models presented in the literature that use conventional methods based on datasheet parameters [9] [10] [11]. All these models accurately predict the I-V characteristics for monocrystalline and polycrystalline modules, whereas they fail in a fair prediction of the characteristics of thin film solar cells. The electrical equivalent of a single-diode PV cell is presented, where: IL is the light-generated current in the absorber layer, Id—current through the diode, I—the total current, and V—the output voltage, Rs—the series resistance, Rsh—the shunt resistance.
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