Abstract

In this paper, a plasmonic refractive index sensor consisting of a Metal-Insulator-Metal (MIM) waveguide is proposed introducing a hexagonal ring resonator coupled with two waveguides for the sensing purpose of the refractive index with fabrication plan. The simulation results obtained from the analysis, electromagnetic field and transmission spectra have been observed. We have demonstrated the change in transmittance if specific physical parameters are changed in the design. By tuning the device, the sensitivity of the structure can go up to 2950 nm/RIU and FoM up to 43.055. Furthermore, the base material is changed to doped silicon to make the device CMOS-compatible.

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