Abstract
In this paper, we have investigated numerically AlGaAs/GaAs multi-quantum well superluminescent diodes. In these devices the dependence of optical gain, output power on the cavity length and the density states have been analyzed. It is observed that the optical gain and its FWHM bandwidth increase with the increasing density state. Furthermore, the output power increases with the increasing cavity length, whereas the FWHM bandwidth decreases.
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