Abstract

A modified large-size MOCVD reactor is developed to produce uniform and large-volume epitaxy thin film layer of gallium nitride (GaN). The full governing equations for continuity, momentum, energy and chemical species are solved numerically. It is investigated how thermal flow field, and the operating parameters affect molar concentration of each reactant, and the thin film uniformity. These parameters are involved such as the chamber pressure (100-700 torr), susceptor rotation rate (100-800). In this paper, the simulation results from these listed parameters shows that an optimum epitaxy layer can be achieved in the large-size reactor.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.