Abstract
AbstractIn order to obtain a large Si grain and to control the location of grain boundary in a Si film thermally melting-crystallized by pulse laser, we have proposed to use a periodic thermal distribution spontaneously induced by a linearly polarized laser beam. The lateral grain growth of polycrystalline Si thin films, which is controlled by the laser-induced periodic thermal distribution, was analyzed numerically by two-dimensional finite element computer simulations. From this analysis, it can be conclude that the laser irradiation should be performed to melt not all but most of Si film or melt it partially, making the large difference between the maximal and minimal temperature in the thermal distribution. It was also found that the temperature difference was increased with the optical absorption in the Si film and the fluence.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
