Abstract
This article studies the underlying physical mechanism and comprehensive characteristics of the N-channel IGBT (N-IGBT) with P-drift region (PD-IGBT). Distinguishing from the conventional N-IGBT with N-drift region (ND-IGBT), the main blocking junction ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${J}_{\text {MB}}$ </tex-math></inline-formula> ) of the PD-IGBT is changed from the emitter side to the collector side, which leads to a significant enhancement effect of dynamic electric field modulation. Based on the effect, the PD-IGBT features fast dynamic electric field (E-field) building speed in the drift region and a high E-field at the edge of the field-stop (FS) layer, which can extract excess carriers stored in the device rapidly during the turn-off transient, thus reducing the turn-off loss ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\rm {OFF}}$ </tex-math></inline-formula> ) and turn-off time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${t}_{\rm {OFF}}$ </tex-math></inline-formula> ) of the device. Moreover, the change of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${J}_{\text {MB}}$ </tex-math></inline-formula> location can also alleviate the E-field crowding phenomenon at the trench gate corner, thus providing an optimized relationship between breakdown voltage (BV) and ON-state voltage, as well as high avalanche energy. Simulation results show that, when compared with the state-of-the-art N-channel ND-IGBT, the PD-IGBT offers 46% shorter <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${t}_{\rm {OFF}}$ </tex-math></inline-formula> , 57% lower <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\rm {OFF}}$ </tex-math></inline-formula> , and 60% larger avalanche energy without compromising other device characteristics.
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