Abstract
AbstractThis paper presents an analysis of the numerical algorithms used to model microwave semiconductor devices. A comparison is made of the relative merits and features of the more popular finite difference schemes. A new generalized Scharfetter–Gummel formulation is presented which is compatible with drift diffusion and energy‐transport formulations, and is suitable for implementing in two‐dimensional simulations on personal computers. The treatment allows for fully degenerate semiconductors, but implementation for the nondegenerate situation is easily obtained as a special case. The convergence and stability properties of the generalized scheme are discussed. The simulation of a planar submicrometre gate length GaAs MESFET is used to illustrate the application of these algorithms.
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