Abstract
The shape and growth rate of the bismuth nucleus deposited onto amorphous silicon monoxide and carbon substrates has been studied for mean film thicknesses of about one monolayer, with the aid of a vacuum microbalance and an electron microscope. It was found from profile electron micrographs that the shape of the bismuth nucleus is a sphere-like polyhedron at substrate temperatures above about 100 °C and a flat crystalline below about 100 °C. On the basis of recent nucleus growth theories, the dependence of the nucleus radius on deposition time was calculated for various substrate temperatures, using both the shape factor of the nuclei and the surface diffusion distanc of the bismuth adatoms. It is shown that the calculated values agree well with the observed ones. A problem concerning the diffusion of deposited atoms into the substrate is also discussed.
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