Abstract
We employ a suite of surface analysis techniques that probe the outermost ZnTe/As-Si(112) surface to generate an understanding of the initial stages of the heteroepitaxial HgCdTe/CdTe/ZnTe/As-Si(112) layer formation. Ion scattering spectroscopy (ISS), reflection-high energy electron diffraction (RHEED), along with nondestructive depth profiles by angle-resolved x-ray photoelectron spectroscopy (XPS) are successfully applied to clarify and support the nucleation stages of ZnTe formation on the As-terminated Si(112) substrate. Data indicate a slow growth of the first ZnTe layer. In addition, no evidence of thick ZnTe island formation exists. The current ZnTe formation process generates full coverage on the Si(112) surface after six to nine MBE cycles. In order to fully understand the details of the ZnTe nucleation process on the Si(112) substrate, we present an inelastic background analysis with the Tougaard method to study surface morphology.
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