Abstract
Influence of oxygen atoms in the atmosphere during in-situ annealing on the nucleation of polycrystalline silicon grains at the surface of amorphous silicon (a-Si) formed by low-pressure chemical vapour deposition is studied. The quantity of the oxygen atoms has a close relationship with the grain diameter. This is thought to be due to thin suboxide-islands produced on the a-Si surface during the annealing. The result calculated for the relationship between the density of the suboxide-islands and the annealing time by assuming that trap sites for oxygen atoms exist on the a-Si surface agrees with the experimental result for the density of the grains.
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