Abstract
The defect production due to low-fluence medium-mass ion implantation into GaAs and GaP at room temperature is investigated. In the parameter region analysed weakly damaged layers are created containing point defects and point defect complexes. Temperature dependent channeling measurements show different structures of the damage produced in the two materials. The depth profiles of the near-edge optical absorption coefficient K sufficiently correspond to the profiles of the primarily produced vacancy concentration N vac. The absorption coefficient K( N vac) determined from the depth profiles of the two magnitudes shows a square root dependence for GaAs, whereas for GaP a linear dependence is found. The differences observed are discussed in the frame of different nucleation mechanisms.
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