Nucleation of diamond on silicon wafers using C 60 in the hot filament chemical vapour deposition system

Abstract

Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth using C60 in the hot filament chemical vapour deposition (HFCVD) system. The process of nucleation and growth of diamond films on silicon wafer using C60 as intermediate layer in HFCVD system is described. In order to increase the density of diamond nuclei on the wafers, it is not necessary to use negative bias. The UV-light pre-treatment is not beneficial for improving the diamond nucleation. The multi-layers of C60 molecules, but not a monolayer, can increase the density of diamond nuclei in the presence of H atoms.