Abstract
Transition metal dichalcogenides (TMDs) attract intence attention due to its unique optoelectrical features. Recent progress in production stage of TMD enables us to synthesis uniform and large area TMD with mono layer thickness. Elucidation of growth mechanism is a challenge to improve the crystallinity of TMD, which is regargeded as a next crutial subject in the production stage. Here we report novel diffusion and nucleation dynamics during tungsten disulphide (WS2) growth. The diffusion length (Ld) of the precursors have been measured with unique nucleation control methods. It was revealed that the Ld reaches up to ~750 μm. This ultra-long diffusion can be attributed to precursor droplets observed during in-situ monitoring of WS2 growth. The integrated synthesis of >35,000 single crystals and monolayer WS2 was achieved at the wafer scale based on this model. Our findings are highly significant for both the fundamental study of droplet-mediated crystal growth and the industrial application of integrated single-crystal TMDs.
Highlights
Transition metal dichalcogenides (TMDs) attract intence attention due to its unique optoelectrical features
Little is known about TMD growth dynamics, their precursors and nucleation in particular, which are important for the synthesis of high-quality single crystals
The integrated synthesis of >35,000 single crystals and monolayer WS2 was achieved at the wafer scale based on this model
Summary
Transition metal dichalcogenides (TMDs) attract intence attention due to its unique optoelectrical features. Little is known about TMD growth dynamics, their precursors and nucleation in particular, which are important for the synthesis of high-quality single crystals. Accurate nucleation-controlled growth enabled us to determine the diffusion length (Ld) of the precursors.
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