Abstract
InN was deposited on c-sapphire and GaN substrates using conventional and pulsed metalorganic vapor-phase epitaxy. The nucleation and evolution of thin film growth was investigated. Growth temperature, V/III molar ratio, and substrate material were varied for the two different growth modes (conventional vs. pulsed MOCVD). It was found that InN deposition was sensitive to V/III molar ratio and growth temperature. Photoluminescence results show a peak emission at 0.83 eV. Results are presented that show the highest quality InN was deposited using pulsed metalorganic vapor-phase Epitaxy on GaN substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
