Abstract
AbstractDiamond thin films were deposited onto Si (100) substrates using liquid a solution of water and acetone, ethanol, methanol and commercial Tequila as precursors by the Pulsed Liquid Injection Chemical Vapor Deposition (PLICVD) technique. Temperature was varied from 550 °C to 850 °C. In this work we attempted to find a crystal diameter dependence on temperature and pressure from the experimental data. The goal in this work is to found a function that can be adjusted to the experimental data.
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