Abstract
Nucleation and growth process of defect clusters in cerium dioxide (CeO2) with fluorite-type crystal structure has been investigated in situ under electron irradiation by using high voltage transmission electron microscopy. Planar defect clusters were formed with electron irradiation ranging from 200 to 1000keV at temperatures below 450K. The defect clusters were determined to be faulted-interstitial type dislocation loops lying on {111} planes. The growth rate of dislocation loops was found to increase with decreasing electron energy. An analysis of the fluence dependence of the growth process of dislocation loops suggests an increase in the vacancy mobility with decreasing electron energy. The rate of the electronic excitation is discussed in terms of the radiation-induced diffusion of oxygen-ion vacancies.
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