Abstract
AbstractChromium disilicide layers have been grown on Si(111) in a commercial molecular beam epitaxy machine. Islands are found to nucleate with more than one epitaxial orientation, and three different orientations have been identified: CrSi2(0001)//Si(111) with CrSi2 [1010]//Si[110]. CrSi2(0001)//Si(111) with CrSi2[ll20]//Si[1l0], and CrSi2(1100)//Si(111) with CrSi2[000l]//Si[112]. Very thin (2 nm) layers have been studied under a variety of growth conditions to determine factors controlling the orientation of nuclei. The degree and direction of substrate misorientation, the growth technique, and the use of a CoSi2 buffer layer are all factors affecting the morphology of CrSi2 islands.
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