Abstract
To clarify the growth mechanism of the lateral growth of Ge in the rapid-melting-growth process, two types of molecular-dynamics simulation were investigated in this study. One was the nucleation of Si1-xGex (0 ≤x ≤1) from supercooled melts, and the other is the growth rate of supercooled Si1-xGex melts using a crystalline Si1-xGex seed. The incubation time is found to be minimum at approximately 0.70 Tm (Tm: melting temperature for Si1-xGex). No nucleation was found when the temperature was higher than 0.75 Tm. The crystal growth rates of Si1-xGex peaked between 0.90 Tm and 0.94 Tm for both the [100] and [111] orientations. These results suggest that 0.90 Tm to 0.94 Tm of Si1-xGex (x = 1) is an optimum temperature range to grow crystalline Ge in the rapid-melting-growth process.
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