Abstract
The structure of excited states in 28Si as well as the energy dependence of the reaction mechanism are investigated. Angular distributions related to the 0 1 +, 2 1 +, 4 1 +, 0 2 +, 3 1 +, 2 2 + + 2 3 +, 3 1 − + 4 2 + levels in the 28Si(n, n′) reaction were measured at incident energies 6.8, 7.0, 8.0 … 12.0 MeV. The analysis was extended up to 14.8 MeV bombarding energy. The experimental cross sections are described by means of a coupled-channel calculation including compound nucleus contributions. The low-lying excited states can be interpreted by a rotational model with prolate but also with oblate g.s. deformation. For the higher-lying states various coupling schemes have been tested. Especially, a second rotational band could be described adopting an oblate deformation.
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