Abstract
Recent nuclear magnetic resonance (NMR) measurements of nuclear spin relaxation phenomena in amorphous semiconductors are discussed using examples from several amorphous systems. Studies of nuclear spin-lattice relaxation times (T 1) and spin-spin relaxation times (T 2) are useful probes of several important phenomena in amorphous semiconductors. For example, the anomalous temperature dependences (approximately T β , 1 ⩽ β ⩽ 2) of the spin-lattice relaxation rates in several chalcogenide glasses have been attributed to the presence of disorder modes in these amorphous solids. In some cases the dominant contributions to T 1 are made by defects or impurities, such as trapped molecular hydrogen or “dangling bonds” in a-Si:H. Other localized electronic states can also play important roles in spin lattice relaxation processes. Such states include optically induced ESR centers or optically excited band tail states. Spin-spin relaxation rates are useful probes of dipolar interactions in amorphous semiconductors. From these measurements one can infer such structural details as clustering of hydrogen in a-Si:H and intermediate-range ordering in As 2S 3 and As 3Se 3.
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