Abstract
By means of the 3He nuclear reaction analysis (NRA) and elastic recoil detection analysis (ERDA) techniques, the annealing-temperature dependence of the depth profiles of D and H implanted in Si(100), poly-Si, and GaAs(100) was measured. Implanted D in Si(100) is more tightly trapped than H. The detrapping energy of H-GaAs is larger than that of H-Si.
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