Abstract

A scanned, focused high-energy proton beam (2–3 MeV) allows the techniques of proton induced x-ray emission (PIXE), nuclear elastic backscattering spectrometry (BS), channeling contrast microscopy (CCM), and secondary electron microscopy to be used simultaneously to image the structural and elemental composition of technologically important materials. Quantiative information about the materials may be obtained from the images. These techniques are described, and examples are presented of characterization, at 1 μm spatial resolution, of mosaic single crystal Y 1Ba 2Cu 3O 7−δ high temperature superconductors and heteroepitaxial GaAs films grown on 〈100〉 Si substrates.

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