Abstract
Damage creation in GaAs, implanted with Ga focused ion beams at various flux densities from 24 to 390 mA/cm 2, has been investigated by microprobe Rutherford backscattering/channeling and channeling contrast microscopy measurements. Implantation damage by focused ion beams was strongly decreased with the increase in flux density during implantation. High flux density implantation by Ga focused ion beams in GaAs was found to induce beam annealing during implantation.
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