N-type semiconductor [Gd3+-Ho3+-Dy3+]:SnO2 driven functionality enhancement in energy systems associated with photovoltaic and electrochemical contraptions

Abstract

Current work reports the sustainable synthesis and application of the novel n-type [Gd3+-Ho3+-Dy3+]:SnO2 semiconductor material expressing band gap energy narrowing upon lanthanide triple doping. The band gap energy of this material spanned around 3.8–3.9 eV. Rare earth doped SnO2 material has tetragonal rutile crystalline geometry, space group P42/mnm, and 59.46 nm particle size. Thin films for this material have remarkable coverage. Using this material as an electron transport layer inside all inorganic perovskite device resulted in a negligible hysteresis leading to remarkable power conversion efficiency of 14.16 %, fill factor 80 %, short circuit current 16.48 mA cm−2, and an open circuit voltage of 1.02 V [Gd3+-Ho3+-Dy3+]:SnO2 decorated nickel foam electrode expressed double layer mechanism of electrical charge storage gaining a specific capacitance of 689 F g−1 in 0.1 M NaCl electrolyte at 10 mV/s. Excellent electronic and ionic conductivity was expressed by impedance studies with equivalent series resistance (Rs) of as low as 0.11 Ω. Furthermore, the electro-catalytic water splitting results exhibited the auspicious of this material as an HER catalyst with lower overpotential and Tafel slope values of 140 mV and 125.5 mV dec−1, respectively. The developed material is a suitable candidate for advanced energy applications marked by sustainability and economic viability.