Abstract
In n-type silicon the capture cross sections of metallic impurities, are neatly smaller than in p-type. So, lifetime and also diffusion length of minority carriers should be neatly higher. This is of a paramount interest for multicrystalline silicon wafers, in which the impurity-defects interaction governs the recombination strength of minority carriers. In 1.2 /spl Omega/cm wafer, lifetime is found around 200 /spl mu/s and diffusion lengths around 220 /spl mu/m, These values increase strongly after gettering treatments like phosphorus diffusion or AI-Si alloying. Scan maps reveal that extended defects are poorly active, even when the density of dislocation is higher than 10/sup 5/ cm/sup -2/. High quality abrupt p/sup +/n junctions are obtained by Al-Si alloying and annealing at 850 or 900 /spl deg/C, which could be used for rear junction cells.
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