N-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C

Abstract

The development of diamond power devices has been hindered due to the challenge in the achievement of n-type diamond electronic devices. In this study, we report the phosphorus-doped n-type diamond metal-semiconductor field-effect transistor (MESFET). We selectively grew heavily phosphorus doped diamond layer to improve the ohmicity of the source and drain contacts. The MESFET showed clear pinch-off and saturation characteristics. The transconductance was improved to be 0.1 <inline-formula> <tex-math notation="LaTeX">$\mu \text{S}$ </tex-math></inline-formula>/mm by 100 times from room temperature to 300&#x00B0;C.