Abstract
n-type conductivity was observed in thin films of BN deposited by microwave plasma-assisted chemical vapour deposition using a single-source organometallic precursor. The depositions were carried out on various substrates using N2 as the carrier gas. These films were characterized by FTIR, XRD and SEM which revealed the presence of crystallites of boron nitride. The deposition conditions were optimized to obtain the maximum concentration of c-BN in the thin films of boron nitride. Seebeck studies indicate that electrons are the majority charge carriers. I-V studies of the p-n junction between p-Si and n-BN indicate typical behaviour of diode characteristics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
