Abstract
Abstract Silicon nitride, aluminium nitride and iron nitride thin films grown by reactive sputtering on Si and polyimide substrates at various deposition conditions were analysed by nuclear reaction analysis ( 14 N(p , γ), 14 N(d, p) , 14 N(d , α), 14 N (α, α) and 27 Al(p , γ)) and Rutherford backscattering spectrometry. The results obtained with these analytical techniques were compared and correlations among film properties and deposition parameters were found.
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