Abstract
The mechanism of resolution improvement in novolak-based positive photoresists was investigated from the stand-point of the image formation process. The image formation process in the novolak-quinonediazide system involves the dissolution inhibition in unexposed parts and the dissolution promotion in exposed parts. The 4-(gamma)-value, which is one of the indexes of resolution capabilities, depends greatly on the difference between the solubility of unexposed parts and that of exposed parts, i.e.-the lower dissolution rate in unexposed parts(Ro) and the higher one in exposed parts(Rp) are desirable to obtain high γvalues.
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