Novel zero-resistance states induced by photoexcitation in the high mobility GaAs/AlGaAs two-dimensional electron system

Abstract

The high mobility two-dimensional electron system exhibits vanishing resistance under photoexcitation at low temperatures in the vicinity of B=[4/(4j+1)]Bf. Here, the characteristic magnetic field Bf=2πfm∗/e,m∗ is an effective mass, e is the charge, and f is the microwave frequency. In this report, we present further experimental results that illustrate the phenomenology of the effect.