Abstract
Novel vertical Hall cells which detect the magnetic field parallel to the chip surface were developed using the standard bipolar technology. In the devices, an n+ buried layer makes a vertical current flow and introduces the sensitivity parallel to the chip surface. A sensitivity of 75 V/AT was measured.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
