Abstract
A novel etch process on silicon has been developed that consists of a conventional anisotropic etch process followed by stripping the protective oxide layer and etching the substrate once again in the anisotropic etch solution. As a result micron size patterns have been generated from a starting pattern size of 7 μm. These micron size patterns appear to have (111) sidewalls that can be used as templates for the graphoepitaxial process. We are currently exploring the possibility of generating submicron patterns using 2-μm size starting patterns.
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