Abstract
Low-temperature ultrasonic measurements were employed for observation of isolated vacancies in crystalline silicon. The elastic constants of FZ crystalline silicon revealed low-temperature softening below about 20 K down to base temperature 20 mK in present experiments. The softening of non-doped FZ silicon being free from applied filed indicates a non-magnetic charge state V0 of vacancy. The disappearance of softening in boron-doped FZ silicon under applied magnetic fields up 2T means magnetic charge state V+. This novel ultrasonic tool succeeded in observation of low-temperature softening in perfect crystal region of non-doped CZ silicon ingot indicating distribution of isolated vacancies.
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