Novel two-dimensional square-AlAs: Direct semiconductor coupled with high electron-hole mobility ratio toward sunlight-driven water-splitting

Abstract

The design of new monolayered atomic motifs always attracts enormous attention due to their interesting properties induced by unique crystal phases and promising catalytic applications in low dimensional devices. Herein, we propose a novel square-AlAs monolayer based on ab initio density functional theory calculations, whose good stability is confirmed from the perspectives of energy, dynamics, thermodynamics, and mechanics. Electronic structure calculations reveal that the newly predicted square-AlAs monolayer is a direct-gap semiconductor with a bandgap of 1.39 eV, which is sensitive to in-plane strain, meanwhile the strain induced changes in bandgap allow advantageous modulations of optical absorption in visible-light region. Unfortunately, the unfavorable hydrogen evolution reaction (HER) band edge levels make square-AlAs not suitable for photocatalytic water-splitting in spite of the appropriate bandgap, high electron-hole mobility ratio and strong visible light absorption. However, a favorable effect caused by strain engineering is revealed by the fact that the square-AlAs can meet the requirement of photocatalytic water-splitting under the suitable biaxial loading. Particularly, compared to pure AlAs, the Gibbs free energy of hydrogen adsorption indicate that Boron-doping can effectively decrease the HER overpotential. Moreover, the external potential provided by photoexcited electrons for oxygen evolution reaction (OER) is quite positive, which can serve as a free and pollution-free driving force to drive OER to proceed spontaneously for pure AlAs or reduce the OER overpotential to a very low value (0.15 V) for Boron-doped AlAs, overmatching widely used IrO2 catalyst.