Abstract
This paper presents a novel thermal metrology that is based on non-uniform power distribution. This metrology has successfully been used for validating the cartridge thermal design of Pentium(R) III Xeon/sup TM/ processor products with large integrated L2 cache. This paper is divided into two parts. In the first part, the methods and materials used in thermal metrology development are highlighted. Detailed descriptions of finite element thermal modeling performed to define the formula and metrology of cartridge thermal resistance as well as thermal requirements for Pentium(R) III Xeon/sup TM/ cartridge processor design are presented. In addition, illustrations of appropriate thermal test vehicle design that allows accurate simulation and measurement of non-uniform power distribution and die surface temperatures are also included. Measurement capability analysis on the overall accuracy and stability of thermal metrology is illustrated. In the second part, thermal interface material characterization and design validation activities, which are carried out using the proposed thermal metrology during the cartridge technology development, are discussed in detail.
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