Abstract
ABSTRACTA multi-probe in situ temperature monitoring system with a closed-loop process control has been developed using the technique of emissivity-compensated pyrometry for semiconductor epitaxial growth via metal-organic chemical vapor deposition. A stand-alone temperature calibration unit was designed to correct for reactor-to-reactor temperature variations. After calibration, a probe-to-probe temperature mismatch of less than ±0.13°C was obtained. Moreover, a temperature offset induced by the inevitable viewport deposition over time was demonstrated. A 4.28°C temperature bias was successfully double-calibrated by introducing a compensation factor into the radiation equations, which was then validated during twelve processing runs of light emitting diode epitaxial growth.
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